ABSOLUTE MAXIMUM RATINGS (25°C unless
otherwise specified)
Storage Temperature
Operating Temperature
Lead Soldering Temperature
(5 secs maximum)
-40°C to +85°C
-25°C to +85°C
260°C
INFRARED EMITTING DIODE
Power Dissipation
75 mW
Forward Current ( Continuous )
50 mA
Forward Current ( Peak )
1A
(Pulse Width ≤ 100µs, Duty Ratio = 0.01)
Reverse Voltage
6V
PHOTO DETECTOR
Power Dissipation
Output Current
Allowed Range V35 (ISTS972)
(ISTS973)
Allowed Range V45 (ISTS972)
(ISTS973)
250 mW
50mA
0 to 17V
0 to 35V
0 to 17V
0 to 40V
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
Input
Forward Voltage (V )
F
Reverse Voltage (VR)
Reverse Current (IR)
1.1 1.7 V
6
V
10 µA
Detector
Operating Voltage Range VCC
Low Level Supply Current ICCL
High Level Supply Current ICCH
Low Level Output Voltage VOL
High Level Output Voltage VOH
ISTS972
4.75
5.25 V
2.0 15 mA
1.0 15 mA
0.4 V
2.4
V
High Level Output Current IOH
ISTS973
100 µA
Input Forward Threshold Current IFT
Propagation Delay Time
to Logic High at Output
tPLH
Propagation Delay Time
to Logic Low at Output
tPHL
Rise Time
tr
Fall Time
tf
15 mA
5
µs
5
µs
0.1
µs
0.05
µs
TEST CONDITION
I = 20mA
F
IR = 10µA
VR = 3V
VCC= 5.25V, IF = 15mA
VCC= 5.25V, IF = 0mA
VCC= 4.75V, IF = 15mA
IOL = 12.8mA
VCC= 4.75V, IF = 0mA
IOH = -800µA
VCC= 4.75V, IF = 0mA
VOH = 30V
VCC= 5V
VCC= 5V
IF = 15mA
RL= 360Ω (ISTS973)
or
RL= 8TTL Loads
(ISTS972)
Note 1 Special Selections are available on request. Please consult the factory.
3/10/97
DB92094-AAS/A2