IXGH12N60C View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXGH12N60C' PDF : 2 Pages View PDF
1
2
IXGH 12N60C
Symbol
gfs
Cies
Coes
Cres
Qg
Q
ge
Qgc
td(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
E
off
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
5 11
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
860
pF
64
pF
15
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
32
nC
10
nC
10
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
20
ns
20
ns
60
ns
55
ns
0.09
mJ
20
ns
20
ns
0.15
mJ
85 180 ns
85 180 ns
0.27 0.60 mJ
1.25 K/W
0.25
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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