IXGH32N60B View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXGH32N60B' PDF : 5 Pages View PDF
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B IXGT 32N60BD1
2.5
5
TJ = 125°C
2.0
RG = 10Ω
4
E(ON)
1.5
3
E(OFF)
1.0
2
0.5
1
0.0
0
0
20
40
60
80
IC - Amperes
Fig. 7. Dependence of tfi and EOFF on IC.
15
IC = 32A
12
VCE = 300V
9
6
3
0
0 25 50 75 100 125 150
Qg - nanocoulombs
Fig. 9. Gate Charge
2.5
TJ = 125°C
2.0
IC = 32A
1.5
1.0
5
4
E(ON)
3
E(OFF)
2
0.5
1
0.0
0
0
10 20 30 40 50 60
RG - Ohms
Fig. 8. Dependence of tfi and EOFF on RG.
100
10
TJ = 125°C
RG = 4.7Ω
dV/dt < 5V/ns
1
0.1
0 100 200 300 400 500 600
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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