IXKC25N80C View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXKC25N80C' PDF : 4 Pages View PDF
IXKC 25N80C
275
250
225
200
175
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
TC [°C]
Fig. 1 Power Dissipation
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
tp = 10 μs
5
20 V
10 V
8V
7V
6V
I5 V
10
15
20
25
30
VDS [V]
Fig. 2 Typ. Output Characteris-
0.75
TJ = 150°C
0.7
0.65
0.6
4 V 4.5 V 5 V
0.55
5.5 V 6 V 6.5 V
0.5
0.45
0.4
0.35
0.3
0.25
0
7V
8V
10 V
20 V
5 10 15 20 25 30 35
ID [A]
Fig. 4 Typ. Drain-Source
on Resistance
10 2
0.8
0.7
ID = 11 A
VGS = 10 V
0.6
0.5
0.4
0.3
98%
0.2
typ
0.1
0
-60 -20
20
60 100 140 180
TJ [°C]
Fig. 5 Drain-Source On-State
Resistance
16
ID = 17 A, pulsed
14
tp = 10 μs
12
0.2 VDS max
10 1
10 0.8 VDS max
8
10 0
TJ = 25°C typ
6
TJ = 150°C typ
TJ = 25°C (98%)
4
TJ = 150°C (98%)
2
10 -1
0
0.4 0.8 1.2 1.6 2
VSD [V]
2.4 2.8 3
Fig. 7 Forward Characteristics
of Body Diode
0
0 40 80 120 160 200 240 280 320
QG [nC]
Fig. 8 Typ. Gate Charge
IXYS reserves the right to change limits, test conditions and dimensions.
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70
TJ = 150°C
tp = 10 μs
60
50
40
30
20 V
10 V
8V
7V
6.5 V
6V
5.5 V
20
5V
10
0
0
5
Fig. 3
4.5 V
4V
10
15
20
25
30
V
DS
[V]
Typ. Output Characteris-
130
tp = 10 μs
120
25°C
110
100
90
80
70
150°C
60
50
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS [V]
Fig. 6 Typ. Transfer Characteris-
10 5
VGS = 0 V
f = 1 MHz
10 4
10 3
10 2
10 1
Crss
Ciss
Coss
10 0
0
100 200 300 400 500 600 700 800
VDS [V]
Fig. 9 Capacitance
20080526a
3-4
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