Symbol
Test Conditions
Characteristic Values
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
TO-247 (IXTH) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Integrated gate input resistor
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247, TO-3P)
Safe Operating Area Specification
Symbol
SOA
Test Conditions
VDS = 400V, ID = 0.5A, TC = 75°C, tp = 2s
Min.
9
Typ.
12
8100
530
115
3.5
35
117
94
40
240
58
135
0.25
Max.
15 S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.31 °C/W
°C/W
Min.
200
Typ.
Max.
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
t
rr
I
F
=
I,
S
-di/dt
=
100A/μs,
V
R
=
100V
30 A
120 A
1.5 V
500
ns
123
∅P
e
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537