IXTH50N30L2 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXTH50N30L2' PDF : 6 Pages View PDF
IXTH50N30L2
Fig. 7. Maximum Drain Current vs. Case Temperature
60
70
Fig. 8. Input Admittance
50
60
50
40
40
30
30
20
TJ = 125oC
20
25oC
- 40oC
10
10
0
0
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
40
TJ = - 40oC
35
30
25oC
25
125oC
20
15
10
5
0
0
10
20
30
40
50
60
70
ID - Amperes
Fig. 10. Forward Voltage Drop of Intrinsic Diode
160
140
120
100
80
TJ = 125oC
60
TJ = 25oC
40
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD - Volts
Fig. 11. Gate Charge
10
100,000
Fig. 12. Capacitance
9
VDS = 150V
8
I D = 25A
I G = 10mA
7
6
f = 1 MHz
Ciss
10,000
5
4
1,000
Coss
3
2
1
0
0
50
100
150
200
250
300
350
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
0
Crss
5
10
15
20
25
30
35
40
VDS - Volts
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