IXTK110N20L2 View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

MFG CO.

IXTK110N20L2

LinearL2™ Power MOSFET w/Extended FBSOA

IXYS CORPORATION 

1 2 3 4 5

Symbol

Test Conditions

(TJ = 25°C, Unless Otherwise Specified)

gfs

VDS= 10V, ID = 0.5 • ID25, Note 1

Ciss

Coss

Crss

VGS = 0V, VDS = 25V, f = 1MHz

td(on)

tr

td(off)

tf

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

Qg(on)

Qgs

Qgd

VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RthJC

RthCS

Characteristic Values

Min. Typ. Max.

55

75

95 S

23

nF

2160

pF

320

pF

40

ns

100

ns

33

ns

135

ns

500

nC

110

nC

182

nC

0.13 °C/W

0.15

°C/W

IXTK110N20L2

IXTX110N20L2

TO-264 (IXTK) Outline

Safe-Operating-Area Specification

Symbol

SOA

Test Conditions

VDS = 200V, ID = 2.88A, TC = 75°C, Tp = 5s

Characteristic Values

Min. Typ. Max.

575

W

PLUS 247TM (IXTX) Outline

Source-Drain Diode

Symbol

Test Conditions

(TJ = 25°C, Unless Otherwise Specified)

IS

VGS = 0V

ISM

Repetitive, Pulse Width Limited by TJM

VSD

IF = 55A, VGS = 0V, Note 1

trr

IRM

QRM

IF = 55A, -di/dt = 100A/μs,

VR = 100V, VGS = 0V

Characteristic Values

Min. Typ. Max.

110 A

440 A

1.35 V

420

ns

39

A

8.3

μC

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

Dim. Millimeter

Inches

Min. Max. Min. Max.

A 4.83 5.21

A1 2.29 2.54

A2 1.91 2.16

b 1.14 1.40

b1 1.91 2.13

b2 2.92 3.12

C 0.61 0.80

D 20.80 21.34

E 15.75 16.13

.190 .205

.090 .100

.075 .085

.045 .055

.075 .084

.115 .123

.024 .031

.819 .840

.620 .635

e

5.45 BSC

L 19.81 20.32

L1 3.81 4.32

.215 BSC

.780 .800

.150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

6,683,344 6,727,585 7,005,734 B2 7,157,338B2

6,710,405 B2 6,759,692 7,063,975 B2

6,710,463

6,771,478 B2 7,071,537

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