IXTP50N25T View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXTP50N25T' PDF : 6 Pages View PDF
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ . Max.
35
58
S
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCH
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25
(TO-220)
(TO-3P & TO-247)
4000
410
60
14
25
47
25
78
19
22
0.50
0.25
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31 °C/W
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ . Max.
IS
VGS = 0V
50
A
ISM
Repetitive, Pulse Width Limited by TJM
200
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 25A, -di/dt = 250A/μs
IRM
VR = 100V, VGS = 0V
QRM
166
ns
23
A
1.9
μC
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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