J2N2907A View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

J2N2907A

Hi-Rel 60 V - 0.6 A PNP transistor

STMicroelectronics 

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2N2907AHR

Radiation hardness assurance

Table 8. ESCC 5202/001R post radiation electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICBO

Collector cut-off

current (IE = 0)

IEBO

Emitter cut-off current

(IC = 0)

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

Collector-emitter

V(BR)CEO(1) breakdown voltage

(IB = 0)

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

VCE(sat) (1)

Collector-emitter

saturation voltage

VCB = 50 V

VEB = 3 V

IC = 10 µA

IC = 10 mA

IE = 10 µA

IC = 150 mA

IB = 15 mA

-

10 nA

-

10 nA

60

-

V

60

-

V

V

5

-

V

-

0.4

V

VBE(sat) (1)

Base-emitter

saturation voltage

IC = 150 mA IB = 15 mA

-

1.3

V

IC = 0.1 mA VCE = 10 V

[37.5]

[hFE] (1)

Post irradiation gain

calculation (2)

IC = 10 mA

IC = 150 mA

VCE = 10 V

VCE = 10 V

[50]

[100]

-

300

IC = 500 mA VCE = 10 V

[25]

1. Pulsed duration = 300 µs, duty cycle ≤ 2%

2.

The post-irradiation gain calculation

completion of irradiation testing and

aoffte[hrFeEa],cmh aadneneuasliinngg

hsFteEpmifeaansyu,rsehmaellnbtse

from prior to

as specified

and on

in MILSTD-750

method 1019.

DocID15382 Rev 10

11/22

22

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