J2N2907AUB1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'J2N2907AUB1' PDF : 16 Pages View PDF
2N2907AHR
3
Radiation hardness assurance
Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/291 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5202/001 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N2907AHR
series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s,
identical to the ESCC 100 krad guarantee. It is supported with the same Radiation
Verification Test report provided with each shipment. A brief summary of the standard High
Dose Rate by wafer lot JANSR guarantee is provided below:
– All test are performed in accordance to MIL-PRF-19500 and test method 1019 of
MIL-STD-750 for total Ionizing dose.
The table below provides for each monitored parameters of the test conditions and the
acceptance criteria
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Max.
ICBO
IEBO
V(BR)CEO
Collector to base
cutoff current
Emitter to base
cutoff current
Breakdown voltage,
collector to emitter
VCB = 60
VCB = 50 V
VEB = 5 V
VEB = 4 V
IC = 10 mA
20
µA
20
nA
20
µA
100
nA
60
V
ICES
Collector to emitter
cutoff current
VCE = 50 V
100
nA
hFE
Forward-current
transfer ratio
VCE = 10 V; IC = 0.1 mA
[37.5](1)
VCE = 10 V; IC = 1.0 mA
[50](1)
400
VCE = 10 V; IC = 10 mA
[50](1)
VCE = 10 V; IC = 150 mA
[50](1)
300
VCE = 10 V; IC = 500 mA
[25](1)
VCE(sat)
Collector-emitter
saturation voltage
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
0.46
V
1.84
VBE(sat)
Base-emitter
saturation voltage
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
0.6
1.5
3
V
DocID15382 Rev 10
9/22
22
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