JCS640C View Datasheet(PDF) - Jilin Sino-Microelectronics
Part Name
Description
MFG CO.
'JCS640C' PDF : 10 Pages View PDF
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS640
On-Region Characteristics
Transfer Characteristics
VGS
Top 15V
10V
9V
8V
7V
6.5V
6V
10
5.5V
Bottom 5V
10
150℃
1
25℃
Notes:
1. 250μs pulse test
0.1
2. TC=25℃
Notes:
1.250μs pulse test
2.VDS=40V
1
1
10
2
4
6
8
10
VDS [V]
VGS Gate-Source Voltage[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.22
0.21
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0
VGS=20V
VGS=10V
Note:Tj=25℃
2 4 6 8 10 12 14 16 18 20 22
ID [A]
10
150℃
1
25℃
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V S D Source-Drain voltage[V]
Capacitance Characteristics
Gate Charge Characteristics
12
VDS=40V
10
VDS=100V
8
VDS=160V
6
4
2
0
0
10
20
30
40
50
Qg Toltal Gate Charge [nC]
版本：201007A
5/10
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