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JCS7N65F View Datasheet(PDF) - Jilin Sino-Microelectronics

Part Name
Description
MFG CO.
JCS7N65F
Hwdz
Jilin Sino-Microelectronics Hwdz
'JCS7N65F' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
Parameter
符号
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
最大脉冲漏极电流(注 1
Drain Current - pulse note 1
IDM
最高栅源电压
Gate-Source Voltage
VGSS
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2EAS
雪崩电流(注 1
Avalanche Currentnote 1
重复雪崩能量(注 1
Repetitive Avalanche Currentnote 1
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dtnote 3
IAR
EAR
dv/dt
耗散功率
Power Dissipation
最高结温及存储温度
PD
TC=25
-Derate
above
25
Operating and Storage Temperature
Range
引线最高焊接温度
TJTSTG
Maximum Lead Temperature for Soldering TL
Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JCS7N65F
数值
Value
JCS7N65F
650
7.0*
4.4*
单位
Unit
V
A
A
28*
A
±30
V
420
mJ
7.0
A
14.7
mJ
5.5
V/ns
48
W
0.38
W/
-55+150
300
版本:201004A
2/8
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