JCS830C View Datasheet(PDF) - Jilin Sino-Microelectronics
Part Name
Description
MFG CO.
'JCS830C' PDF : 14 Pages View PDF
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS830
On-Region Characteristics
Transfer Characteristics
VGS
Top 15V
10V
8V
10
7V
6.5V
6V
5.5V
Bottom 5V
Notes：
1
1. 250μs pulse test
2. TC=25℃
1
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
10
25℃
150℃
1
Notes：
1.250μs pulse test
2.VDS=40V
0.1
2
4
6
8
10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2.0
1.9
1.8
1.7
VGS=10V
1.6
1.5
VGS=20V
1.4
1.3
1.2
Note ：Tj=25℃
1.1
0
2
4
6
8
ID [A]
Capacitance Characteristics
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. VGS=0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V SD [V]
Gate Charge Characteristics
12
V =400V
DS
10
V =250V
DS
8
V =100V
DS
6
4
2
0
0
4
8
12 16 20 24 28 32 36
Q Toltal Gate Charge [nC]
g
版本：201007A
5/14
Share Link: 
