K4B2G1646C-HCF8 View Datasheet(PDF) - Samsung
Part Name
Description
MFG CO.
'K4B2G1646C-HCF8' PDF : 64 Pages View PDF
K4B2G1646C
datasheet
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
CK
VTT
CK
tAON
DQ, DM
DQS , DQS
TDQS , TDQS
VSSQ
TSW2
TSW1
VSW1
VSW2
End point Extrapolated point at VSSQ
VSSQ
Figure 14. Definition of tAON
Begin point : Rising edge of CK - CK
with ODT being first registered high
CK
VTT
CK
tAONPD
DQ, DM
DQS , DQS
TDQS , TDQS
VSSQ
TSW2
TSW1
VSW1
VSW2
End point Extrapolated point at VSSQ
VSSQ
Figure 15. Definition of tAONPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
CK
CK
VRTT_Nom
DQ, DM
DQS , DQS
TDQS , TDQS
VSW2
tAOF
End point Extrapolated point at VRTT_Nom
VSW1
TSW2
TSW1
VTT
VSSQ
TD_TAON_DEF
Figure 16. Definition of tAOF
- 24 -
Rev. 1.11
DDR3 SDRAM
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