K4B2G1646C-HCF8 View Datasheet(PDF) - Samsung
Part Name
Description
MFG CO.
'K4B2G1646C-HCF8' PDF : 64 Pages View PDF
K4B2G1646C
datasheet
Rev. 1.11
DDR3 SDRAM
IDD
IDDQ
VDD
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
VSS
VDDQ
DQS, DQS
DQ, DM,
TDQS, TDQS
RTT = 25 Ohm
VDDQ/2
VSSQ
[NOTE : DIMM level Output test load condition may be different from above]
Figure 19. Measurement Setup and Test Load for IDD and IDDQ Measurements
Application specific
memory channel
environment
Channel
IO Power
Simulation
IDDQ
Test Load
IDDQ
Simulation
IDDQ
Measurement
Correlation
Correction
Channel IO Power
Number
Figure 20. Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
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