L3100B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'L3100B' PDF : 8 Pages View PDF
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
Parameter
VRM
Stand-off voltage
I
IRM
Reverse leakage current
VBR
Breakdown voltage
Ipp
VBO
Breakover voltage
IH
Holding current
IBO
IBO
Breakover current
IH
IPP
Peak pulse current
VGN
Gate voltage
IRM
IGN, IGP Triggering gate current
VRGN Reverse gate voltage
C
Capacitance
L3100B/L3100B1
V
VRM
V V BR
BO
OPERATION WITHOUT GATE
Type
IRM @ VRM
max.
L3100B
L3100B1
µA V
6
60
40 250
6
60
40 250
VBR @ IR
min.
V mA
265 1
VBO @ IBO
max. min. max.
note 1
V mA mA
350 200 500
IH
min.
note 1
mA
280
255 1 350 200 500 210
C
max.
note 2
pF
100
100
OPERATION WITH GATES
VGN @ IGN = 200 mA IGN @ VAC = 100V VRGN @ IG = 1mA IGP @ VAC = 100V
Type
min.
max.
min.
max.
min.
max.
V
V
mA
mA
V
L3100B/B1
0.6
1.8
30
200
0.7
Note 1 : See the reference test circuits for IH, IBO and VBO parameters.
Note 2 : VR = 5 V, F = 1MHz.
mA
150
3/8
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