L6114 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

L6114

QUAD 100 V, DMOS SWITCH

STMicroelectronics 

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L6114 - L6115

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

VDS

VCC

ID

Drain-source Voltage

Supply Voltage

Continuous Drain Current

IDM (*) Pulsed Drain Current

Parameter

@<0>Tpins = 90 °C

@<0>Tcase = 90 °C

ISD Continuous Source-drain

Diode Current

@<0>Tpins = 90 °C

@<0>Tcase = 90 °C

ISDM Pulsed Source Drain Diode Current

VIN Input Voltage

VEN Enable Voltage

VS

Source Voltage

Ptot Total Power Dissipation

@ Tpins = 90 °C

@ Tcase = 90 °C

@ Tamb = 70 °C

@ Tamb = 70 °C

Tstg, Tj Storage and Junction Temperature Range

(*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %.

Note : ID, IDM, ISD, ISDM are given per channel.

Powerdip

Multiwatt –15

Powerdip

Multiwatt –15

Powerdip

Multiwatt –15

Powerdip

Multiwatt –15

Powerdip

Multiwatt –15

Powerdip

Multiwatt –15

Value

Unit

100

V

60

V

1.5

A

3

A

5

A

8

A

1.5

A

3

A

5

A

8

A

7

V

7

V

– 1 to + 4

V

4.3

W

20

W

1.3

W

2.3

W

– 40 to + 150

°C

THERMAL DATA

Symbol

Rth j-pins

Rth j-case

Rth j-amb

Parameter

Thermal Resistance Junction-pins

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Max.

Max.

Powerdip

14

-

65

Multiwatt–15

-

3

35

Unit

oC/W

oC/W

oC/W

2/11

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