L6208Q View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'L6208Q' PDF : 34 Pages View PDF
Electrical characteristics
4
Electrical characteristics
L6208Q
VS = 48 V, TA = 25 °C, unless otherwise specified.
Symbol
Table 4. Electrical characteristics
Parameter
Test condition
VSth(ON)
VSth(OFF)
Turn-on threshold
Turn-off threshold
IS
Quiescent supply current
Tj(OFF) Thermal shutdown temperature
Output DMOS transistors
All bridges
125 °C(1)
OFF;
Tj
=
-25
°C
to
RDS(ON)
High-side switch ON resistance
Low-side switch ON resistance
IDSS
Leakage current
Tj = 25 °C
Tj = 125 °C(1)
Tj = 25 °C
Tj = 125 °C(1)
EN = low; OUT = VS
EN = low; OUT = GND
Source drain diodes
VSD
Forward ON voltage
trr
Reverse recovery time
tfr
Forward recovery time
ISD = 2.5 A, EN = low
If = 2.5 A
Logic input (EN, CONTROL, HALF/FULL, CLOCK, RESET, CW/CCW)
VIL
VIH
IIL
IIH
Vth(ON)
Vth(OFF)
Vth(HYS)
Low level logic input voltage
High level logic input voltage
Low level logic input current
High level logic input current
Turn-on input threshold
Turn-off input threshold
Input threshold hysteresis
GND logic input voltage
7 V logic input voltage
Switching characteristics
tD(on)EN
tD(off)EN
tRISE
tFALL
tDCLK
Enable to out turn ON delay time(2)
Enable to out turn OFF delay time(2)
Output rise time(2)
Output fall time(2)
Clock to output delay time(3)
ILOAD = 2.5 A, resistive load
ILOAD = 2.5 A, resistive load
ILOAD = 2.5 A, resistive load
ILOAD = 2.5 A, resistive load
ILOAD = 2.5 A, resistive load
Min. Typ. Max. Unit
6.6 7 7.4 V
5.6 6 6.4 V
5 10 mA
165
°C
0.34 0.4
0.53 0.59
0.28 0.34
0.47 0.53
2 mA
-0.15
mA
1.15 1.3 V
300
ns
200
ns
-0.3
0.8 V
2
7
V
-10
µA
10 µA
1.8 2.0 V
0.8 1.3
V
0.25 0.5
V
100 250 400 ns
300 550 800 ns
40
250 ns
40
250 ns
2
µs
8/34
DocID018710 Rev 3
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