L6385E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

L6385E

High-voltage high and low side driver

STMicroelectronics 

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L6385E

High-voltage high and low side driver

Features

■ High voltage rail up to 600V

■ dV/dt immunity ±50V/nsec in full temperature

range

■ Driver current capability:

– 400mA source,

– 650mA sink

■ Switching times 50/30 nsec rise/fall with 1nF

load

■ CMOS/TTL Schmitt trigger inputs with

hysteresis and pull down

■ Under voltage lock out on lower and upper

driving section

■ Internal bootstrap diode

■ Outputs in phase with inputs

DIP-8

SO-8

Description

The L6385E is an high-voltage device,

manufactured with the BCD"OFF-LINE"

technology. It has an Half - Bridge Driver structure

that enables to drive independent referenced N

Channel Power MOS or IGBT. The High Side

(Floating) Section is enabled to work with voltage

Rail up to 600V. The Logic Inputs are CMOS/TTL

compatible for ease of interfacing with controlling

devices.

Figure 1. Block diagram

BOOTSTRAP DRIVER

VCC 3

UV

DETECTION

2

HIN

1

LIN

UV

DETECTION

LOGIC

LEVEL

SHIFTER

8 Vboot

H.V.

HVG

R

DRIVER

HVG

R

7

S

OUT

6

VCC

5 LVG

LVG

DRIVER

4 GND

Cboot

TO LOAD

D97IN514B

October 2007

Rev 1

1/16

www.st.com

16

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