L6387E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

L6387E

High-voltage high and low side driver

STMicroelectronics 

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L6387E

High-voltage high and low side driver

Features

■ High voltage rail up to 600V

■ dV/dt immunity ±50V/nsec in full temperature

range

■ Driver current capability:

– 400mA source,

– 650mA sink

■ Switching times 50/30 nsec rise/fall with 1nF

load

■ CMOS/TTL Schmitt trigger inputs with

hysteresis and pull down

■ Internal bootstrap diode

■ Outputs in phase with inputs

■ Interlocking function

DIP-8

SO-8

Description

The L6387E is an high-voltage device,

manufactured with the BCD"OFF-LINE"

technology. It has a Driver structure that enables

to drive independent referenced N Channel Power

MOS or IGBT. The high side (Floating) Section is

enabled to work with voltage Rail up to 600V. The

Logic Inputs are CMOS/TTL compatible for ease

of interfacing with controlling devices.

Figure 1. Block diagram

BOOTSTRAP DRIVER

VCC 3

UV

DETECTION

2

HIN

1

LIN

LOGIC

LEVEL

SHIFTER

8 Vboot

H.V.

HVG

DRIVER

HVG

R

7

S

OUT

6

VCC

5 LVG

LVG

DRIVER

4 GND

Cboot

TO LOAD

D00IN1135

October 2007

Rev 1

1/15

www.st.com

15

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