L6470PD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
L6470PD
STMicroelectronics
'L6470PD' PDF : 70 Pages View PDF
L6470
3
Electrical characteristics
Electrical characteristics
VSA = VSB = 36 V; VDD = 3.3 V; internal 3 V regulator; TJ = 25 °C, unless otherwise
specified.
Symbol
Table 5. Electrical characteristics
Parameter
Test condition
Min. Typ. Max. Unit
General
VSthOn
VSthOff
VSthHyst
VS UVLO turn-on threshold
VS UVLO turn-off threshold
VS UVLO threshold hysteresis
Iq
Quiescent motor supply current
Tj(WRN)
Tj(SD)
Thermal warning temperature
Thermal shutdown temperature
Charge pump
Internal oscillator selected;
VREG = 3.3 V ext.; CP floating
Vpump
fpump,min
Voltage swing for charge pump oscillator
Minimum charge pump oscillator
frequency(1)
fpump,max
Maximum charge pump oscillator
frequency(1)
Iboot Average boot current
fsw,A = fsw,B = 15.6 kHz
POW_SR = '10'
Output DMOS transistor
RDS(on) High-side switch on-resistance
RDS(on) Low-side switch on-resistance
IDSS Leakage current
tr
Rise time(3)
Tj = 25 °C, Iout = 3 A
Tj = 125 °C, (2) Iout = 3 A
Tj = 25 °C, Iout = 3 A
Tj = 125 °C, (2) Iout = 3 A
OUT = VS
OUT = GND
POW_SR = '00', Iout = +1 A
POW_SR = '00', Iout = -1 A
POW_SR = '11', Iout = ±1 A
POW_SR = '10', Ilout = ±1 A
POW_SR = '01', Iout = ±1 A
7.5 8.2 8.9 V
6.6 7.2 7.8 V
0.7 1 1.3 V
0.5 0.65 mA
130
°C
160
°C
10
V
660
kHz
800
kHz
1.1 1.4 mA
0.37
0.51
0.18
0.23
3.1
mA
-0.3
100
80
100
ns
200
300
DocID16737 Rev 7
11/73
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