Application information
L6566BH
turn-off to prevent any negative-going edge that follows leakage inductance
demagnetization from triggering the ZCD circuit erroneously.
The voltage at the pin is both top and bottom limited by a double clamp, as illustrated in the
internal diagram of the ZCD block of Figure 8. The upper clamp is typically located at 5.7 V,
while the lower clamp is located at -0.4 V. The interface between the pin and the auxiliary
winding is a resistor divider. Its resistance ratio is properly chosen (see Section 5.11: OVP
block) and the individual resistance values (RZ1, RZ2) are such that the current sourced and
sunk by the pin is within the rated capability of the internal clamps (± 3 mA).
At converter power-up, when no signal is coming from the ZCD pin, the oscillator starts up
the system. The oscillator is programmed externally by means of a resistor (RT) connected
from the OSC pin (13) to ground. With good approximation the oscillation frequency fosc is:
Equation 2
fosc
≈
2 ⋅ 103
RT
(with fosc in kHz and RT in kΩ). As the device is turned on, the oscillator starts immediately;
at the end of the first oscillator cycle, the voltage on the ZCD pin being zero, the MOSFET is
turned on, therefore starting the first switching cycle right at the beginning of the second
oscillator cycle. At any switching cycle, the MOSFET is turned off as the voltage on the
current sense pin (CS, 7) hits an internal reference set by the line feedforward block, and the
transformer starts demagnetization. If this completes (so a negative-going edge appears on
the ZCD pin) after a time exceeding one oscillation period Tosc = 1/fosc from the previous
turn-on, the MOSFET is turned on again – with some delay to ensure minimum voltage at
turn-on – and the oscillator ramp is reset. If, on the other hand, the negative-going edge
appears before Tosc has elapsed, it is ignored and only the first negative-going edge after
Tosc turns on the MOSFET and synchronizes the oscillator. In this way one or more drain
ringing cycles are skipped (“valley-skipping mode”, Figure 9) and the switching frequency is
prevented from exceeding fosc.
Figure 9. Drain ringing cycle skipping as the load is gradually reduced
VDS
VDS
VDS
TON
TFW
TV
Tosc
Pin = Pin'
(limit condition)
t
Tosc
Pin = Pin'' < Pin'
t
t
Tosc
Pin = Pin''' < Pin''
AM11485v1
Note:
When the system operates in valley skipping-mode, uneven switching cycles may be
observed under some line/load conditions, due to the fact that the OFF-time of the MOSFET
is allowed to change with discrete steps of one ringing cycle, while the OFF-time needed for
cycle-by-cycle energy balance may fall in between. Therefore, one or more longer switching
cycles is compensated by one or more shorter cycles and vice versa. However, this
mechanism is absolutely normal and there is no appreciable effect on the performance of
the converter or on its output voltage.
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Doc ID 16610 Rev 2