L6917 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'L6917' PDF : 33 Pages View PDF
L6917B
ELECTRICAL CHARACTERISTICS (continued)
VCC = 12V ±10%, TJ = 0 to 70°C unless otherwise specified
Symbol
Parameter
Test Condition
Input Offset
FBR=1.100V to1.850V;
FBG=GND
SR Slew Rate
VSEN=10pF
DIFFERENTIAL CURRENT SENSING
IISEN1, Bias Current
IISEN2
Iload=0
IPGNDSx Bias Current
IISEN1, Bias Current at
IISEN2 Over Current Threshold
IFB Active Droop Current
Iload<0%
Iload=100%
GATE DRIVERS
tRISE High Side
HGATE Rise Time
VBOOTx-VPHASEx=10V;
CHGATEx to PHASEx=3.3nF
IHGATEx High Side
Source Current
VBOOTx-VPHASEx=10V
RHGATEx High Side
Sink Resistance
VBOOTx-VPHASEx=12V;
tRISE Low Side
LGATE Rise Time
VCCDR=10V;
CLGATEx to PGNDx=5.6nF
ILGATEx Low Side
Source Current
VCCDR=10V
RLGATEx Low Side
Sink Resistance
VCCDR=12V
P GOOD and OVP/UVP PROTECTIONS
PGOOD Upper Threshold
(VSEN/DACOUT)
VSEN Rising
PGOOD Lower Threshold
(VSEN/DACOUT)
VSEN Falling
OVP
Over Voltage Threshold
(VSEN)
VSEN Rising
UVP
Under Voltage Trip
(VSEN/DACOUT)
VSEN Falling
VPGOOD PGOOD Voltage Low
IPGOOD = -4mA
Min Typ Max Unit
-12
12
mV
15
V/µs
45
50
55
µA
45
50
55
µA
80
85
90
µA
0
1
µA
47.5
50
52.5
µA
15
30
ns
2
A
1.5
2
2.5
Ω
30
55
ns
1.8
A
0.7
1.1
1.5
Ω
108 112 116
%
84
88
92
%
2.0
2.25
V
56
60
64
%
0.3
0.4
0.5
V
4/33
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