L6919E View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'L6919E' PDF : 33 Pages View PDF
L6919E
ELECTRICAL CHARACTERISTICS (continued)
VCC = 12V ±15%, TJ = 0 to 70°C unless otherwise specified
Symbol
Parameter
Test Condition
DIFFERENTIAL CURRENT SENSING
IISEN1, Bias Current
IISEN2
ILOAD = 0
IPGNDSx Bias Current
IISEN1, Bias Current at
IISEN2 Over Current Threshold
IFB Active Droop Current
ILOAD ≤ 0%
ILOAD = 100%
GATE DRIVERS
tRISE High Side
HGATE Rise Time
VBOOTx-VPHASEx=10V;
CHGATEx to PHASEx=3.3nF
IHGATEx High Side
Source Current
VBOOTx-VPHASEx=10V
RHGATEx High Side
Sink Resistance
VBOOTx-VPHASEx=12V;
tRISE Low Side
LGATE Rise Time
VCCDR=10V;
CLGATEx to PGNDx=5.6nF
ILGATEx Low Side
Source Current
VCCDR=10V
RLGATEx Low Side
Sink Resistance
VCCDR=12V
PROTECTIONS
PGOOD Upper Threshold
(VSEN/DAC Output)
VSEN Rising
PGOOD Lower Threshold
(VSEN/DAC Output)
VSEN Falling
OVP
Over Voltage Threshold
(VSEN)
VSEN Rising
UVP
Under Voltage Trip
(VSEN/DAC Output)
VSEN Falling
VPGOODL PGOOD Voltage Low
IPGOOD = -4mA
IPGOODH PGOOD Leakage
VPGOOD = 5V
Min Typ Max Unit
45
50
55
µA
45
50
55
µA
80
85
90
µA
0
1
µA
47.5
50
52.5
µA
15
30
ns
2
A
1.5
2
2.5
Ω
30
55
ns
1.8
A
0.7
1.1
1.5
Ω
108 112 116
%
84
88
92
%
1.915
2.05
V
55
60
65
%
0.4
V
1
µA
4/33
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