LCP02-150B1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'LCP02-150B1' PDF : 8 Pages View PDF
LCP02-150B1
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
1 - PARAMETERS RELATED TO THE NEGATIVE SUPPRESSOR
Symbol
IGn
IH-
IRGL-
VDGL-
Parameter
Negative gate trigger
current
Holding current
(see fig.2)
Reverse leakage
current Gn/Line
Dynamic switching
voltage Gn / Line
(see note 2)
Test conditions
VGn/GND = -60V
Measured at 50Hz
Go-No Go test, VGn = -60V
Tj = 25°C, VGn/line = -190V
VGn/GND = -60V
10/1000µs 1kV RP = 25Ω IPP = 30A
10/700µs 2kV RP = 25Ω IPP = 30A
1.2/50µs 2kV RP = 25Ω IPP = 30A
Min. Max. Unit
5 mA
150
mA
5
µA
18
8
V
15
2 - PARAMETERS RELATED TO THE POSITIVE SUPPRESSOR
Symbol
IGp
IRGL+
VDGL+
Parameter
Positive gate trigger
current
Reverse leakage
current Gp/LINE
Dynamic switching
voltage Gp / Line
(see note 2)
Test conditions
VGp/GND = 60V
Measured at 50Hz
Tj = 25°C, VGp/line = +190V
VGp/GND = +60V
10/1000µs 1kV RP = 25Ω IPP = 30A
10/700µs 2kV RP = 25Ω IPP = 30A
1.2/50µs 2kV RP = 25Ω IPP = 30A
Min. Max. Unit
5 mA
5 µA
18
8
V
35
3 - PARAMETERS RELATED TO LINE/GND
Symbol
Parameter
Test conditions
Typ. Max.
IR
Reverse
Tj = 25°C, VLINE = +90V, VGP/LINE = +1V
5
leakage current Tj = 25°C, VLINE = -105V, VGN/LINE = -1V
5
Coff
Capacitance
LINE/GND
VR = -3V, F =1MHz, VGp = 60V, VGn = -60V 60
Note 2: The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.
Unit
µA
pF
4/8
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