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LE12ABD-TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
LE12ABD-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'LE12ABD-TR' PDF : 39 Pages View PDF
Electrical characteristics
LExxAB LExxC
Table 24.
Symbol
Electrical characteristics for LE80C (refer to the test circuits, TJ = 25 °C, CI = 0.1 µF,
CO = 2.2 µF unless otherwise specified.)
Parameter
Test conditions
Min. Typ. Max. Unit
VO Output voltage
IO = 10 mA, VI = 10 V
7.84 8 8.16
V
IO = 10 mA, VI = 10 V, TA = -25 to 85°C 7.68
8.32
VI Operating input voltage IO = 100 mA
18
V
IO Output current limit
150
mA
ΔVO Line regulation
VI = 8.7 to 18 V, IO = 0.5 mA
5
35 mV
ΔVO Load regulation
VI = 9 V, IO = 0.5 to 100 mA
3
25 mV
Id Quiescent current
VI = 9 to 18V, IO = 0mA
VI = 9 to 18V, IO=100mA
ON MODE
0.7 1.6
mA
1.7 3.6
VI = 9 V
OFF MODE
70 140 µA
f = 120 Hz
72
SVR Supply voltage rejection IO = 5 mA, VI = 10 ± 1 V f = 1 kHz
66
dB
f = 10 kHz
57
eN Output noise voltage
B = 10 Hz to 100 kHz
50
µV
Vd Dropout voltage
VIL Control input logic low
VIH Control input logic high
II Control input current
CO
Output bypass
capacitance
IO = 100 mA
IO = 100 mA, TA = -40 to 125°C
TA = -40 to 125°C
TA = -40 to 125°C
VI = 9 V, VC = 6 V
ESR = 0.1 to 10 Ω, IO = 0 to 100 mA
0.2 0.4
V
0.5
0.8
V
2
V
10
µA
2
10
µF
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