LED55C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
'LED55C' PDF : 4 Pages View PDF
GaAs INFRARED EMITTING DIODE
LED55B LED55C LED56
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
VR
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 # steradians.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power LED55B(7)
Total Power LED55C(7)
Total Power LED56(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS SYMBOL
MIN
TYP
MAX
UNITS
IF = 100 mA
!P
IF = 100 mA
"
—
940
—
—
±8
—
nm
Deg.
IF = 100 mA
VF
—
—
1.7
V
VR = 3 V
IR
—
—
10
µA
IF = 100 mA
PO
3.5
—
—
mW
IF = 100 mA
PO
5.4
—
—
mW
IF = 100 mA
PO
1.5
—
—
mW
tr
—
1.0
—
µs
tf
—
1.0
—
µs
www.fairchildsemi.com
2 OF 4
6/05/01 DS300312
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