LET9060STR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

LET9060STR

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

STMicroelectronics 

1 2 3 4 5 6 7 8 9 10

Maximum ratings

1

Maximum ratings

TCASE = 25 °C.

Table 2. Absolute maximum ratings

Symbol

Parameter

V(BR)DSS

VGS

ID

PDISS

TJ

TSTG

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation (@ TC = 70 °C)

Max. operating junction temperature

Storage temperature

Table 3. Thermal data

Symbol

Parameter

RthJC Junction-case thermal resistance

LET9060

Value

Unit

80

V

-0.5 to +15

V

12

A

95

W

165

°C

-65 to +150

°C

Value

1.0

Unit

°C/W

2/11

Doc ID 010019 Rev 1

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