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LH28F004SUT-LC15 View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
LH28F004SUT-LC15
Sharp
Sharp Electronics Sharp
'LH28F004SUT-LC15' PDF : 31 Pages View PDF
LH28F004SU-LC
4M (512K × 8) Flash Memory
DC Characteristics
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
TYP.
IIL
Input Load Current
ILO Output Leakage Current
4
ICCS VCC Standby Current
0.3
ICCD
VCC Deep Power-Down
Current
0.2
ICCR1 VCC Read Current
ICCR2 VCC Read Current
9
ICCW VCC Write Current
5
ICCE VCC Block Erase Current 6
ICCES
VCC Erase Suspend
Current
3
IPPS VPP Standby Current
IPPD
VPP Deep Power-Down
Current
0.2
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
±1
µA VCC = VCC MAX., VIN = VCC or GND 1
±10
µA VCC = VCC MAX., VIN = VCC or GND 1
8
µA VCC = VCC MAX.,
CE », RP » = VCC ±0.2 V
1,4
4
mA VCC = VCC MAX.,
CE », RP » = VIH
5
µA RP» = GND ±0.2 V
1
VCC = VCC MAX.,
CMOS: CE » = GND ±0.2 V
35
mA Inputs = GND ±0.2 V or VCC ±0.2 V, 1, 3, 4
TTL: CE» = VIL,
Inputs = VIL or VIH,
f = 8 MHz, IOUT = 0 mA
VCC = VCC MAX.,
CMOS: CE » = GND ±0.2 V
20
mA Inputs = GND ±0.2 V or VCC ±0.2 V, 1, 3, 4
TTL: CE» = VIL,
Inputs = VIL or VIH,
f = 4 MHz, IOUT = 0 mA
12
mA
Byte/Two-Byte Serial Write
in Progress
1
12 mA Block Erase in Progress
1
6
mA CE» = VIH
1, 2
Block Erase Suspended
±10
µA VPP ≤ VCC
1
5
µA RP» = GND ±0.2 V
1
20
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