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LH28F008SCB-L120 View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
LH28F008SCB-L120
Sharp
Sharp Electronics Sharp
'LH28F008SCB-L120' PDF : 55 Pages View PDF
sharp
LHF08CH1
39
6.2.8 BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE(3,4)
Sym.
tWHQV1
tEHQV1
tWHQV2
tEHQV2
tWHQV3
tEHQV3
tWHQV4
tEHQV4
tWHRH1
tEHRH1
tWHRH2
tEHRH2
Parameter
Byte Write Time
Block Write Time
Block Erase Time
VCC=3.3V±0.3V, TA=0°C to +70°C
VPP=3.3V
VPP=5V
Notes Typ.(1) Max. Typ.(1) Max.
2
19
300
10
150
2
1.2
4
0.7
2
2
0.8
6
0.4
5
Set Lock-Bit Time
2
21
300 13.3 150
Clear Block Lock-Bits Time
2
Byte Write Suspend Latency
Time to Read
Erase Suspend Latency
Time to Read
1.8
6
1.2
5
7.1
10
6.6
9.3
15.2 21.1 12.3 17.2
VPP=12V
Typ.(1) Max.
7
125
0.5
1.5
0.3
4
11.6 125
1.1
4
7.4
10.4
12.3 17.2
Unit
µs
s
s
µs
s
µs
µs
Sym.
VCC=5V±0.5V, 5V±0.25V, TA=0°C to +70°C
VPP=5V
Parameter
Notes Typ.(1)
Max.
VPP=12V
Typ.(1)
Max.
Unit
tWHQV1
tEHQV1
Byte Write Time
Block Write Time
2
8
150
6
100
µs
2
0.5
1.5
0.4
1
s
tWHQV2
tEHQV2
tWHQV3
tEHQV3
tWHQV4
tEHQV4
tWHRH1
tEHRH1
tWHRH2
tEHRH2
NOTES:
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Byte Write Suspend Latency Time to
Read
Erase Suspend Latency Time to Read
2
0.4
5
0.3
4
s
2
12
150
10
100
µs
2
1.1
5
1
4
s
5.6
7
5.2
7.5
µs
9.4
13.1
9.8
12.6
µs
1. Typical values measured at TA=+25°C and nominal voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. Block erase, byte write and lock-bit configuration operations with VCC<3.0V and/or VPP<3.0V are not
guaranteed.
Rev. 1.3
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