LH28F320S5NS-L100 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F320S5NS-L100' PDF : 61 Pages View PDF
sharp
LHF32K10
45
6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK
LOCK-BIT CONFIGURATION PERFORMANCE(3,4)
Sym.
VCC=5V±0.5V, 5V±0.25V, TA=0°C to +70°C
Parameter
Notes
VPP=4.5V-5.5V
Typ.(1)
Max.
Unit
tWHQV1
tEHQV1
tWHQV1
tEHQV1
Word/Byte Write Time
(using W/B write, in word mode)
Word/Byte Write Time
(using W/B write, in byte mode)
Word/Byte Write Time
(using multi word/byte write)
2
9.24
120
µs
2
9.24
120
µs
2
2
120
µs
Block Write Time
(using W/B write, in word mode)
2
0.31
3.7
s
Block Write Time
(using W/B write, in byte mode)
2
0.61
7.5
s
Block Write Time
(using multi word/byte write)
2
0.13
1.5
s
tWHQV2
tEHQV2
Block Erase Time
Full Chip Erase Time
2
0.34
10
s
21.8
640
s
tWHQV3
tEHQV3
tWHQV4
tEHQV4
tWHRH1
tEHRH1
tWHRH2
tEHRH2
NOTES:
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
2
9.24
120
µs
2
0.34
10
s
5.6
7
µs
9.4
13.1
µs
1. Typical values measured at TA=+25°C and nominal voltages. Assumes corresponding block lock-bits are not
set. Subject to change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
Rev. 1.55
Share Link: 
