LH28F400SUT-NC80 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F400SUT-NC80' PDF : 35 Pages View PDF
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
AC Characteristics for WE » - Controlled Command Write Operations1
VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C
SYMBO-
L
PARAMETER
VCC = 5.0 V ± 0.25 V VCC = 5.0 V ± 0.5 V
TYP.
UNITS NOTE
MIN.
MAX.
MIN.
MAX.
tAVAV
tVPWH
tPHEL
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHRL
tRHPL
Write Cycle Time
VPP Set up to WE Going High
RP » Setup to CE » Going Low
CE » Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE » Hold from WE High
WE Pulse Width High
Read Recovery before Write
WE High to RY »/BY » Going Low
RP » Hold from Valid Status Register
Data and RY »/BY » High
60
70
ns
100
100
ns
3
400
430
ns
0
0
ns
55
60
ns 2, 6
55
60
ns 2, 6
55
60
ns
0
0
ns
2
10
10
ns
2
10
10
ns
30
30
ns
0
0
ns
100
100
ns
0
0
ns
3
tPHWL RP» High Recovery to WE Going Low
1
tWHGL Write Recovery before Read
60
tQVVL
VPP Hold from Valid Status Register
Data and RY »/BY » High
0
tWHQV1
tWHQV2
Duration of Byte Write Operation
Duration of Block Erase Operation
13 4.5
0.3
1
µs
65
ns
0
µs
4.5
µs 4, 5
0.3
s
4
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE » for all Command Write operations.
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