LH532000B-1
CMOS 2M MROM
TRUTH TABLE
CE
OE/OE OE1/OE1 BYTE
H
X
X
X
L
L/H
X
X
L
X
L/H
X
L
H/L
H/L
H
L
H/L
H/L
L
L
H/L
H/L
L
NOTE:
1. X = H or L.
Aā1
(D15)
X
X
X
ā
L
H
DATA OUTPUT
D0 ā D7
D8 ā D15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D0 ā D7
D0 ā D7
D8 ā D15
D8 ā D15
High-Z
High-Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Input voltage
Output voltage
Operating temperature
Storage temperature
SYMBOL
VCC
VIN
VOUT
Topr
Tstg
RATING
ā 0.3 to +7.0
ā 0.3 to VCC + 0.3
ā 0.3 to VCC + 0.3
0 to +70
ā 65 to +150
UNIT
V
V
V
°C
°C
ADDRESS INPUT
LSB
MSB
ā
ā
ā
ā
ā
ā
A0
A16
Aā1
A16
Aā1
A16
SUPPLY CURRENT
Standby (ISB)
Operating (ICC)
Operating (ICC)
Operating (ICC)
Operating (ICC)
Operating (ICC)
RECOMMENDED OPERATING CONDITIONS (TA = 0 to +70°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
VCC
4.5
5.0
5.5
V
DC CHARACTERISTICS (VCC = 5 V ±10%, TA = 0 to +70°C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
Input āLowā voltage
VIL
Input āHighā voltage
VIH
Output āLowā voltage
VOL
IOL = 2.0 mA
Output āHighā voltage
VOH
IOH = ā400 µA
Input leakage current
| ILI | VIN = 0 V to VCC
Output leakage current | ILO | VOUT = 0 V to VCC
ICC1
tRC = 120 ns
Operating current
ICC2
ICC3
tRC = 1 µs
tRC = 120 ns
ICC4
tRC = 1 µs
Standby current
ISB1
CE = VIH
ISB2
CE = VCC - 0.2 V
Input capacitance
Output capacitance
CIN
COUT
f = 1 MHz
TA = 25°C
NOTES:
1. CE/OE/OE1 = VIH, OE/OE1 = VIL
2. VIN = VIH or VIL, CE = VIL, outputs open
3. VIN = (VCC - 0.2 V) or 0.2 V, CE = 0.2 V, outputs open
ā 0.3
2.2
2.4
MAX.
0.8
VCC + 0.3
0.4
10
10
50
45
45
40
3
100
10
10
UNIT
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
µA
pF
pF
NOTE
1
2
2
3
3
4