LL4448 View Datasheet(PDF) - Daesan Electronics Corp.

Part Name

Description

MFG CO.

LL4448

SMALL SIGNAL SWITCHING DIODE

Daesan Electronics Corp. 

1 2 3

LL4448

Features

· Silicon epitaxial planar diode

· Fast switching diodes

· 500mW power dissipation

· This diode is also available in the DO-35 case with

the type designation 1N4448

SMALL SIGNAL

SWITCHING DIODES

MELF (DO-35)

SOLDERABLE ENDS

0.020(0.50)

0.011(0.28)

Mechanical Data

· Case: MiniMELF glass case (DO-35)

· Weight: Approx. 0.05 gram

0.146(3.70)

0.130(3.30)

0.063(1.60)

0.051(1.30)

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbol

Reverse Voltage

Peak Reverse Voltage

Average rectified current, Half wave rectification with

Resistive load at TA=25℃ and F≥50Hz

VR

VRM

IAV

Surge forward current at t<1S and TJ=25℃

Power dissipation at TA=25℃

IFSM

Ptot

Junction temperature

TJ

Storage temperature range

TSTG

1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Value

75

100

1501)

500

5001)

175

-65 to +175

Units

Volts

Volts

mA

mA

mW

℃

℃

Electrical characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Min.

Forward voltage at IF=5mA

VF

at IF=10mA

VF

Leakage current at VR=20V

IR

at VR=75V

IR

at VR=20V, TJ=150℃

IR

Junction Capacitance at VR=VF=0V

CJ

Reverse breakdown voltage tested with 100μA Pulse

V(BR)R

100

Reverse Recovery time from IF=10mA to IR=1mA,

VR=6V, RL=100Ω

trr

Thermal resistance, junction to Ambient

Rectification efficiency at f=100MHz, VRF=2V

RθJA

η

0.45

1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Typ.

Max.

0.72

1

25

5

50

4

4

3501)

Units

V

V

nA

μA

μA

pF

V

ns

K/W

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