LP7512 View Datasheet(PDF) - Filtronic PLC

Part Name

Description

MFG CO.

LP7512

Ultra low noise PHEMT

Filtronic PLC 

1 2

• FEATURES

♦ 0.6 dB Noise Figure at 12 GHz

♦ 12 dB Associated Gain at 12 GHz

♦ Low DC Power Consumption

♦ Excellent Phase Noise

DRAIN

BOND

PAD (2X)

GATE

BOND

PAD (2X)

SOURCE

BOND

PAD (2x)

LP7512

ULTRA LOW NOISE PHEMT

• DESCRIPTION AND APPLICATIONS

DIE SIZE: 18.0X13.0 mils (460x330 µm)

DIE THICKNESS: 3.9 mils (100 µm)

BONDING PADS: 1.9X1.9 mils (50x50 µm)

The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances. The epitaxial structure and processing have been

optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si3N4

passivation and is available in a variety of packages.

Typical applications include low noise receiver preamplifiers for commercial applications including

wireless systems and radio link systems.

• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C

Parameter

Symbol

Test Conditions

Min Typ Max Units

Saturated Drain-Source Current IDSS

VDS = 2 V; VGS = 0 V

15

35

50 mA

Noise Figure

NF

VDS = 2 V; IDS = 25% IDSS; f=12 GHz

f=18 GHz

0.6 0.9 dB

1.0 1.4 dB

Associated Gain at minimum

GA

VDS = 2 V; IDS = 25% IDSS; f=12 GHz

9

10

dB

NF

f=18 GHz 7.5 8.5

dB

Transconductance

GM

Gate-Source Leakage Current

IGSO

VDS = 2 V; VGS = 0 V

VGS = -3 V

60

90

mS

1

10 µA

Gate-Drain Leakage Current

IGDO

VGD = -3 V

1

10 µA

Pinch-Off Voltage

VP

VDS = 2 V; IDS = 1 mA

-0.25 -0.8 -1.5

V

Thermal Resistivity

ΘJC

frequency=18 GHz

325

°C/W

Phone: (408) 988-1845

Fax: (408) 970-9950

http:// www.filss.com

Revised: 1/18/01

Email: sales@filss.com

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