LQA10T200C View Datasheet(PDF) - Power Integrations, Inc
Part Name
Description
MFG CO.
'LQA10T200C' PDF : 8 Pages View PDF
LQA10T200C, LQA10N200C
Electrical Specifications at TJ = 25 C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics per diode
IR
Reverse current per diode VR = 200 V, TJ = 25 °C
VR = 200 V, TJ = 125 °C
VF
Forward voltage per diode IF = 5 A, TJ = 25 °C
IF = 5 A, TJ = 150 °C
CJ
Junction capacitance per VR = 10 V, 1 MHz
diode
Dynamic Characteristics per diode
-
-
250
-
0.23
-
-
0.95
1.1
-
0.8
-
-
22
-
tRR
Reverse recovery time,
dIF/dt = 200 A/s TJ = 25 °C
-
13.9
-
per diode
VR = 130 V,
TJ = 125 °C
-
19.5
-
IF = 5 A
QRR
Reverse recovery charge, dIF/dt = 200 A/s TJ = 25 °C
-
15.6
25.5
per diode
VR = 130 V,
TJ = 125 °C
-
32.4
-
IF = 5 A
IRRM
Maximum reverse
dIF/dt = 200 A/s TJ = 25 °C
-
1.78
2.65
recovery current, per
VR = 130 V,
TJ = 125 °C
-
2.6
-
diode
IF = 5 A
S
Softness per diode = tb
ta
dIF/dt = 200 A/s
VR = 130 V,
IF = 5 A
TJ = 25 °C
TJ = 125 °C
-
-
0.44
0.39
-
-
Units
A
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
IF
0
dIF/dt
tRR
ta
tb
IRRM
0.1xIRRM
Pulse generator
VR
D1
L1
DUT
15V
+
Rg
Q1
www.powerint.com
2
Rev. 1.0 04/13
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