LTC1760
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at TA = 25°C (Note 6). VDCIN = 20V, VBAT1 = 12V, VBAT2 = 12V, VVDDS = 3.3V,
VVCC2 = 5.2V unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNITS
VCOFF
VTOC
CH Gate Off Voltage
GCH1
GCH2
CH Switch Reverse Turn-Off Voltage
ILOAD =10μA
VGCH1 – VSCH1
VGCH2 – VSCH2
VBATX – VCSN, 5V ≤ VBATX ≤ 28V
C-Grade (Note 6)
I-Grade (Note 6)
–0.8 –0.4
0
V
–0.8 –0.4
0
V
l
5
20
40
mV
l
2
20
40
mV
VFC
IOC(SRC)
IOC(SNK)
VCHMIN
CH Switch Forward Regulation Voltage
GCH1/GCH2 Active Regulation:
Max Source Current
Max Sink Current
BATX Voltage Below Which
Charging is Inhibited
VCSN – VBATX, 5V ≤ VBATX ≤ 28V
VGCHX – VSCHX = 1.5V
(Note 14)
l 15
35
60
mV
–2
μA
2
μA
3.5
4.7
V
PowerPath Switches
tDLY
Blanking Period after UVLO Trip
Switches Held Off
250
ms
tPPB
Blanking Period after LOPWR Trip
Switches in 3-Diode Mode
1
sec
tONPO GB1O/GB2O/GDCO Turn-On Time
VGS < –3V, from Time of Battery/DC
l
Removal, or LOPWR Indication, CLOAD = 3000pF
5
10
μs
tOFFPO GB1O/GB2O/GDCO Turn-Off Time
VGS > –1V, from Time of Battery/DC
l
Removal, or LOPWR Indication, CLOAD = 3000pF
3
7
μs
VPONO
Output Gate Clamp Voltage
GB1O
GB2O
GDCO
ILOAD = 1μA
Highest (VBAT1 or VSCP) – VGB1O
Highest (VBAT2 or VSCP) – VGB2O
Highest (VDCIN or VSCP) – VGDCO
4.75 6.25
7
V
4.75 6.25
7
V
4.75 6.25
7
V
VPOFFO
Output Gate Off Voltage
GB1O
GB2O
GDCO
ILOAD = –25μA
Highest (VBAT1 or VSCP) – VGB1O
Highest (VBAT2 or VSCP) – VGB2O
Highest (VDCIN or VSCP) – VGDCO
0.18 0.25
V
0.18 0.25
V
0.18 0.25
V
VTOP
PowerPath Switch Reverse
Turn-Off Voltage
VSCP – VBATX or VSCP – VDCIN
6V ≤ VSCP ≤ 28V
C-Grade (Note 6)
I-Grade (Note 6)
l
5
20
60
mV
l
2
20
60
mV
VFP
IOP(SRC)
IOP(SNK)
tONPI
tOFFPI
VPONI
VPOFFI
PowerPath Switch Forward
Regulation Voltage
GDCI/GB1I/GB2I Active Regulation:
Source Current
Sink Current
Gate B1I/B2I/DCI Turn-On Time
Gate B1I/B2I/DCI Turn-Off Time
Input Gate Clamp Voltage
GB1I
GB2I
GDCI
Input Gate Off Voltage
GB1I
GB2I
GDCI
VBATX – VSCP or VDCIN – VSCP
6V ≤ VSCP ≤ 28V
(Note 3)
VGS < –3V, CLOAD = 3000pF (Note 4)
VGS > –1V, CLOAD = 3000pF (Note 4)
ILOAD = 1μA
Highest (VBAT1 or VSCP) – VGB1I
Highest (VBAT2 or VSCP) – VGB2I
Highest (VDCIN or VSCP) – VGDCI
ILOAD = –25μA
Highest (VBAT1 or VSCP) – VGB1I
Highest (VBAT2 or VSCP) – VGB2I
Highest (VDCIN or VSCP) – VGDCI
l
0
25
50
mV
–4
μA
75
μA
300
μs
10
μs
4.75
6.7
7.5
V
4.75
6.7
7.5
V
4.75
6.7
7.5
V
0.18 0.25
V
0.18 0.25
V
0.18 0.25
V
1760fa
5