LTC5599 View Datasheet(PDF) - Linear Technology
Part Name
Description
MFG CO.
'LTC5599' PDF : 42 Pages View PDF
LTC5599
Electrical Characteristics The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TC = 25°C. VCC = 3.3V, EN = 3.3V, VCTRL = 3.3V, PLO = 0dBm, BBPI, BBMI, BBPQ,
BBMQ common mode DC voltage VCMBB = 1.4VDC, I and Q baseband input signal = 2MHz, 2.1MHz, 1VP-P(DIFF, I or Q), I and Q 90°
shifted, lower sideband selection, all registers set to default values, unless otherwise noted. Test circuit is shown in Figure 13.
SYMBOL
tCSS
tCSH
tCS
tCH
tDO
tC%
fCLK
VTEMP
PARAMETER
CSB Setup Time
CSB High Time
SDI to SCLK Setup Time
SDI to SCLK Hold Time
SCLK to SDO Time
SCLK Duty Cycle
Maximum SCLK Frequency
Temperature Diode Voltage
Temperature Slope
CONDITIONS
ITEMP = 100µA
ITEMP = 100µA
MIN
l
20
l
30
l
20
l
10
l
45
l
45
l
20
TYP
MAX
UNITS
ns
ns
ns
ns
ns
50
55
%
MHz
763
mV
1.6
mV/°C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5599 is guaranteed functional over the operating case
temperature range from –40°C to 105°C.
Note 3: At 6MHz offset from the LO signal frequency. 100nF between BBPI
and BBMI, 100nF between BBPQ and BBMQ.
Note 4: The Default Register Settings are listed in Table 1.
Note 5: IM2 is measured at fLO – 4.1MHz.
Note 6: IM3 is measured at fLO – 2.2MHz and fLO – 1.9MHz. OIP3 = lowest
of (1.5 • P{fLO – 2.1MHz} – 0.5 • P{fLO – 2.2MHz}) and (1.5 • P{fLO – 2MHz}
– 0.5 • P{fLO – 1.9MHz}).
Note 7: Without side-band or LO feedthrough nulling (unadjusted).
Note 8: RF power is within 10% of final value.
Note 9: RF power is at least 30dB down from its ON state.
Note 10: VOL voltage scales linear with current sink. For example for
RPULL-UP = 1kΩ, VCC_L = 3.3V the SDO sink current is about (3.3 – 0.2)
/1kΩ = 3.1mA. Max VOL = 0.7 • 3.1/8 = 0.271V, with RPULL-UP the SDO
pull-up resistor and VCC_L the digital supply voltage to which RPULL-UP is
connected to.
Note 11: I and Q baseband Input signal = 2MHz CW, 0.8VP-P, DIFF each,
I and Q 0° shifted.
Note 12: fLO = 500MHz, PLO = 0dBm, C4 = 1.5nF
Note 13: Maximum VOH is derated for capacitive load using the following
formula: VCC_L • exp (–0.5 • TCLK/(RPULL-UP • CLOAD), with TCLK the
time of one SCLK cycle, RPULL-UP the SDO pull-up resistor, VCC_L the
digital supply voltage to which RPULL-UP is connected to, and CLOAD the
capacitive load at the SDO pin. For example for TCLK = 100ns (10MHz
SCLK), RPULL-UP = 1kΩ, CLOAD = 10pF and VCC_L = 3.3V the derating is 3.3
• exp(–5) = 22.2mV, thus maximum VOH = 3.3V – 0.1 – 0.0222 = 3.177V.
Note 14: Minimum VCC in order to retain register data content.
Note 15: Guaranteed by design and characterization. This parameter is not
tested.
Note 16: RF pin guaranteed by design while using a 10nF coupling
capacitor. The RF pin is not tested.
5599f
For more information www.linear.com/LTC5599
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