Revision history
13 Revision history
M25P128
Table 18. Document revision history
Date
Revision
Changes
02-May-2005
0.1 First issue.
09-Jun-2005
Table 2: Protected area sizes updated.
0.2
Memory capacity modified in Section 6.3: Read Identification (RDID).
28-Aug-2005
Updated tPP values in Table 14: AC characteristics and tVSL value in
0.3
Table 8: Power-Up Timing and VWI Threshold. Modified information
in Section 4.1: Page programming and Section 6.8: Page Program
(PP).
20-Jan-2006
Document status promoted from Target specification to Preliminary
data.
1
Packages are ECOPACK® compliant. Blank option removed under
Plating Technology in Table 17. Read Electronic Signature (RES)
instruction removed. ICC1 parameter updated in Table 13: DC
characteristics.
17-Oct-2006
10-Dec-2007
Document status promoted from Preliminary Data to full Datasheet.
Write Protect pin (W) changed to Write Protect/Enhanced Program
supply voltage (W/VPP). Section 4.4: Fast Program/Erase mode and
Figure 24: VPPH timing added. Power-up specified for Fast
Program/Erase mode in Power-up and power-down section.
2
Figure 4: Bus master and memory devices on the SPI bus modified
and Note 2 added.
Note 1 added below Table 15: VDFPN8 (MLP8), 8-lead Very thin
Dual Flat Package No lead, 8 × 6mm, package mechanical data.
VIO max modified in Table 9: Absolute maximum ratings.
3
Applied Numonyx branding.
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