M25P16-VMW3G View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M25P16-VMW3G
STMicroelectronics
'M25P16-VMW3G' PDF : 55 Pages View PDF
Instructions
M25P16
Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) instruction
sequence and data-out sequence
S
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38
C
Instruction
3 Dummy Bytes
tRES2
D
23 22 21
3210
MSB
High Impedance
Q
Electronic Signature Out
76543210
MSB
Deep Power-down Mode
1. The value of the 8-bit Electronic Signature, for the M25P16, is 14h.
Figure 20. Release from Deep Power-down (RES) instruction sequence
Stand-by Mode
AI04047C
S
01234567
tRES1
C
Instruction
D
High Impedance
Q
Deep Power-down Mode Stand-by Mode
AI04078B
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before
the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in Figure 20),
still ensures that the device is put into Stand-by Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES1,
and Chip Select (S) must remain High for at least tRES1(max), as specified in Table 15. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
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