M28C17B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M28C17B' PDF : 17 Pages View PDF
Table 6A. Read Mode DC Characteristics for M28CxxB (5V range)
(TA = 0 to 70 °C or -40 to 85 °C; VCC = 4.5 to 5.5 V)
Symbol
Parameter
Test Condition
ILI Input Leakage Current
0 V ≤ VIN ≤ VCC
ILO Output Leakage Current
0 V ≤ VOUT ≤ VCC
ICC 1
Supply Current (TTL inputs)
Supply Current (CMOS inputs)
E = VIL, G = VIL , f = 5 MHz
E = VIL, G = VIL , f = 5 MHz
ICC1 1 Supply Current (Stand-by) TTL
E = VIH
ICC2 1 Supply Current (Stand-by) CMOS
E > VCC - 0.3V
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
IOL = 2.1 mA
VOH Output High Voltage
Note: 1. All inputs and outputs open circuit.
IOH = -400 µA
M28C16B, M28C17B
Min.
-0.3
2
2.4
Max. Unit
10
µA
10
µA
30
mA
25
mA
1
mA
100
µA
0.8
V
VCC + 0.5 V
0.4
V
V
Table 6B. Read Mode DC Characteristics for M28CxxB-W (3V range)
(TA = 0 to 70 °C or -40 to 85 °C; VCC = 2.7 to 3.6 V)
Symbol
Parameter
Test Condition
ILI Input Leakage Current
0 V ≤ VIN ≤ VCC
ILO Output Leakage Current
0 V ≤ VOUT ≤ VCC
ICC 1 Supply Current (CMOS inputs)
E = VIL, G = VIL , f = 5 MHz, VCC = 3.3V
E = VIL, G = VIL , f = 5 MHz, VCC = 3.6V
ICC2 1 Supply Current (Stand-by) CMOS
E > VCC - 0.3V
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
IOL = 1.6 mA
VOH Output High Voltage
Note: 1. All inputs and outputs open circuit.
IOH = -400 µA
Min.
-0.3
2
0.8 VCC
Max. Unit
10
µA
10
µA
8
mA
10
mA
20
µA
0.6
V
VCC + 0.5 V
0.2 VCC V
V
cessive Write operations, up to tWLQ5H (defined in
Table 10A). The DQ5 line is held low to show
when this timer is running (hence showing that the
device has received one write operation, and is
waiting for the next). The DQ5 line is held high
when the counter has overflowed (hence showing
that the device is now starting the internal write to
the memory array).
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