M28R400C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M28R400C' PDF : 48 Pages View PDF
M28R400CT, M28R400CB
Table 26. CFI Query System Interface Information
Offset
Data
Description
VDD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0017h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VDD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0022h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
00B4h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C6h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
0004h Typical time-out per single word program = 2n µs
20h
0004h Typical time-out for Double Word Program = 2n µs
21h
000Ah Typical time-out per individual block erase = 2n ms
22h
000Ch Typical time-out for full chip erase = 2n ms
23h
0005h Maximum time-out for word program = 2n times typical
24h
0005h Maximum time-out for Double Word Program = 2n times typical
25h
0003h Maximum time-out per individual block erase = 2n times typical
26h
0003h Maximum time-out for chip erase = 2n times typical
Value
1.7V
2.2V
11.4V
12.6V
16µs
16µs
1s
4s
512µs
512µs
8s
32s
33/48
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