M28W320 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'M28W320' PDF : 69 Pages View PDF
Common Flash Interface (CFI)
M28W320FCT, M28W320FCB
Table 27. CFI Query Identification String(1) (continued)
Offset Data
Description
Value
17h 0000h Alternate Vendor Command Set and Control Interface ID Code second
18h 0000h vendor - specified algorithm supported (0000h means none exists)
NA
19h 0000h Address for Alternate Algorithm extended Query table
NA
1Ah 0000h (0000h means none exists)
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 28. CFI Query System Interface Information
Offset
Data
Description
Value
VDD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VDD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
00B4h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C6h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
0004h Typical time-out per single word program = 2n µs
20h
0004h Typical time-out for Double/ Quadruple Word Program = 2n µs
21h
000Ah Typical time-out per individual block erase = 2n ms
22h
0000h Typical time-out for full chip erase = 2n ms
23h
0005h Maximum time-out for word program = 2n times typical
24h
0005h Maximum time-out for Double/ Quadruple Word Program = 2n times typical
25h
0003h Maximum time-out per individual block erase = 2n times typical
26h
0000h Maximum time-out for chip erase = 2n times typical
2.7V
3.6V
11.4V
12.6V
16µs
16µs
1s
NA
512µs
512µs
8s
NA
52/69
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