M28W800 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M28W800

8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

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M28W800BT, M28W800BB

Table 6. Program, Erase Times and Program/Erase Endurance Cycles

Parameter

Test Conditions

M28W800B

Min

Typ

Max

Word Program

VPP = VDD

10

200

Double Word Program

VPP = 12V ±5%

10

200

Main Block Program

VPP = 12V ±5%

VPP = VDD

0.16

5

0.32

5

Parameter Block Program

VPP = 12V ±5%

VPP = VDD

0.02

4

0.04

4

Main Block Erase

VPP = 12V ±5%

VPP = VDD

1

10

1

10

Parameter Block Erase

VPP = 12V ±5%

VPP = VDD

0.8

10

0.8

10

Program/Erase Cycles (per Block)

100,000

Unit

µs

µs

s

s

s

s

s

s

s

s

cycles

14/42

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