M29DW324DT90N6 View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

MFG CO.

M29DW324DT90N6

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory

Numonyx -> Micron 

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M29DW324DT, M29DW324DB

Table 8. Status Register Bits

Operation

Address

DQ7

DQ6

DQ5

DQ3

DQ2

RB

Program

Bank Address

DQ7

Toggle

0

–

–

0

Program During Erase

Suspend

Bank Address

DQ7

Toggle

0

–

–

0

Program Error

Bank Address

DQ7

Toggle

1

–

–

Hi-Z

Chip Erase

Any Address

0

Toggle

0

1

Toggle

0

Block Erase before

timeout

Erasing Block

0

Toggle

0

Non-Erasing Block

0

Toggle

0

0

Toggle

0

0

No Toggle

0

Block Erase

Erasing Block

0

Toggle

0

Non-Erasing Block

0

Toggle

0

1

Toggle

0

1

No Toggle

0

Erase Suspend

Erasing Block

Non-Erasing Block

1

No Toggle

0

–

Data read as normal

Toggle

Hi-Z

Hi-Z

Erase Error

Good Block Address

0

Toggle

1

Faulty Block Address

0

Toggle

1

Note: Unspecified data bits should be ignored.

1

No Toggle Hi-Z

1

Toggle

Hi-Z

Figure 7. Data Polling Flowchart

START

READ DQ5 & DQ7

at VALID ADDRESS

DQ7

=

YES

DATA

NO

NO DQ5

=1

YES

READ DQ7

at VALID ADDRESS

DQ7

=

YES

DATA

NO

FAIL

PASS

AI90194

Figure 8. Toggle Flowchart

START

READ DQ6

ADDRESS = BA

READ

DQ5 & DQ6

ADDRESS = BA

DQ= 6

NO

TOGGLE

YES

NO DQ5

=1

YES

READ DQ6

TWICE

ADDRESS = BA

DQ= 6

NO

TOGGLE

YES

FAIL

PASS

AI08929b

Note: BA = Address of Bank being Programmed or Erased.

20/50

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