Common Flash Interface (CFI)
M29W128FH, M29W128FL
Table 31. CFI Query System Interface Information(1)
Address
x16
x8
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
38h
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
3Ah
00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
3Ch
00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 10mV
1Fh
3Eh
0004h Typical timeout per single Byte/Word program = 2n µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
42h
0009h Typical timeout per individual block erase = 2n ms
22h
44h
0000h Typical timeout for full Chip Erase = 2n ms
23h
46h
0005h Maximum timeout for Byte/Word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
25h
4Ah
0004h Maximum timeout per individual block erase = 2n times typical
26h
4Ch
0000h Maximum timeout for Chip Erase = 2n times typical
1. The values given in the above table are valid for both packages.
Table 32. Device Geometry Definition
Address
x16
x8
Data
Description
27h
4Eh 0018h Device Size = 2n in number of Bytes
28h
50h 0002h
Flash Device Interface Code description
29h
52h 0000h
2Ah
54h
0006h Maximum number of Bytes in Multiple-Byte program or Page= 2n
2Bh
56h 0000h
2Ch
58h
0001h
Number of Erase Block Regions. It specifies the number of regions
containing contiguous Erase Blocks of the same size.
2Dh
5Ah 00FFh Erase Block Region 1 Information
2Eh
5Ch 0000h Number of Erase Blocks of identical size = 00FFh+1
2Fh
5Eh 0000h Erase Block Region 1 Information
30h
60h 0001h Block size in Region 1 = 0100h * 256 Byte
Value
3.0V
3.6V
11.5V
12.5V
16µs
NA
512ms
NA
512µs
NA
8s
NA
Value
16 MBytes
x8, x16
Async.
64
1
256
64
KBytes
64/78