M29W128GH70N6F View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
M29W128GH70N6F
Numonyx -> Micron
'M29W128GH70N6F' PDF : 94 Pages View PDF
M29W128GH, M29W128GL
Figure 20. Chip/Block Erase waveforms (8-bit mode)
DC and AC parameters
A0-A22/
A–1
tAVAV
555h
tELWL
tAVWL
E
tGHWL
G
tWLWH
2AAh
555h
tWLAX
tWHEH
tWHWL
555h
2AAh
555h/BAd
(1)
W
DQ0-DQ7
tDVWH
AAh
55h
tWHDX
80h
AAh
55h
10h/
30h
AI13335
1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BAd and 30h for a Block
Erase command.
2. BAd is the block address.
3. See Table 27: Write AC characteristics, Write Enable Controlled, Table 28: Write AC characteristics, Chip Enable
Controlled and Table 26: Read AC characteristics for details on the timings.
Table 28. Write AC characteristics, Chip Enable Controlled
Symbol Alt.
Parameter
M29W128GH, M29W128GL
60 ns(1) 70 ns
80 ns
Unit
tAVAV tWC Address Valid to Next Address Valid
Min
60
70
80
ns
tWLEL tWS Write Enable Low to Chip Enable Low
Min
0
0
0
ns
tELEH tCP Chip Enable Low to Chip Enable High
Min
35
35
35
ns
tDVEH tDS Input Valid to Chip Enable High
Min
45
45
45
ns
tEHDX tDH Chip Enable High to Input Transition
Min
0
0
0
ns
tEHWH tWH Chip Enable High to Write Enable High
Min
0
0
0
ns
tEHEL tCPH Chip Enable High to Chip Enable Low
Min
30
30
30
ns
tAVEL
tAS Address Valid to Chip Enable Low
Min
0
0
0
ns
tELAX
tAH Chip Enable Low to Address Transition
Min
45
45
45
ns
tGHEL
Output Enable High Chip Enable Low
Min
0
0
0
ns
1. Only available upon customer request.
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