M29W128GH7AZS3F View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

MFG CO.

M29W128GH7AZS3F

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

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M29W128GH, M29W128GL

Common Flash interface (CFI)

Table 37. CFI query system interface information(1)

Address

x 16

x8

Data

Description

VCC logic supply minimum Program/Erase voltage

1Bh

36h

0027h bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

VCC logic supply maximum Program/Erase voltage

1Ch

38h

0036h bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

VPPH [programming] supply minimum Program/Erase voltage

1Dh

3Ah

00B5h bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV

VPPH [programming] supply maximum Program/Erase voltage

1Eh

3Ch

00C5h bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 10 mV

1Fh

3Eh

0004h Typical timeout for single byte/word program = 2n µs

20h

40h

0004h Typical timeout for minimum size write buffer program = 2n µs

21h

42h

0009h Typical timeout for individual block erase = 2n ms

22h

44h

0010h Typical timeout for full Chip Erase = 2n ms

23h

46h

0004h Maximum timeout for byte/word program = 2n times typical

24h

48h

0002h Maximum timeout for write buffer program = 2n times typical

25h

4Ah

0003h Maximum timeout per individual block erase = 2n times typical

26h

4Ch

0004h Maximum timeout for Chip Erase = 2n times typical

1. The values given in the above table are valid for both packages.

Value

2.7 V

3.6 V

11.5 V

12.5 V

16 µs

16 µs

0.5 s

40 s

200 µs

200 µs

2.3 s

400 s

83/94

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