M29W128GL7AZS3E View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

MFG CO.

M29W128GL7AZS3E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

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M29W128GH, M29W128GL

DC and AC parameters

Figure 18. Chip Enable Controlled Program waveforms (8-bit mode)

A0-A22/

A–1

W

G

E

DQ0-DQ7

3rd cycle 4th cycle

tAVAV

555h

PA

Data Polling

PA

tWLEL

tAVEL

tELAX

tEHWH

tGHEL

tELEH

tEHEL1

tDVEH

AOh

PD

tEHDX

tWHWH1

DQ7 DOUT

AI13334

1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check

of Status Register Data Polling bit.

2. PA is the address of the memory location to be programmed. PD is the data to be programmed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (see Section 7.2.1: Data Polling bit (DQ7)).

4. See Table 27: Write AC characteristics, Write Enable Controlled, Table 28: Write AC characteristics, Chip Enable

Controlled and Table 26: Read AC characteristics for details on the timings.

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