M29W800DB70M1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M29W800DB70M1

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

STMicroelectronics 

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M29W800DT

M29W800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase

and Read

■ ACCESS TIMES: 45, 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program

algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W800DT: 22D7h

– Bottom Device Code M29W800DB:

225Bh

Figure 1. Packages

SO44 (M)

TSOP48 (N)

12 x 20mm

FBGA

TFBGA48 (ZA)

6 x 9 mm

FBGA

TFBGA48 (ZE)

6 x 8mm

September 2004

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